Identify the solar cell characteristics from the following options:
 
1. 2.
3. 4.

Subtopic:  PN junction |
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A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100 µA, it brings a change of 10 mA in collector current. If the load resistance is 2 \(k \Omega\) and the input resistance is 1 \(k \Omega\), the value of power gain is x×104. The value of x is:
1. 3
2. 4
3. 2
4. 1
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A potential barrier of \(0.4~\text{V}\) exists across a p-n junction. An electron enters the junction from the n-side with a speed of \(6.0\times10^{5}~\text{ms}^{-1}\). The speed with which the electron enters the p-side will be \(\frac{\mathrm{x}}{3} \times 10^{5} \mathrm{~ms}^{-1}\) The value of \(\mathrm{x}\) is:
(Given the mass of electron = \(9\times 10^{-31}~\text{kg}\), charge on electron = \(1.6\times 10^{-19}~\text{C}\).)
1. \(10\)
2. \(12\)
3. \(14\)
4. \(16\)
Subtopic:  PN junction |
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Potential barrier across a \(\mathrm{p\text-n}\) junction is \(0.6\) V. Electric field intensity, in the depletion region having a width of \(6\times10^{-6}\) m, will be:
1. \(1\times10^{5}\) N/C
2. \(2\times10^{5}\) N/C
3. \(3\times10^{5}\) N/C
4. \(4\times10^{5}\) N/C
Subtopic:  PN junction |
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An \(8\) V Zener diode along with a series resistance \(R\) is connected across a \(20\) V supply (as shown in the figure). If the maximum Zener current is \(25\) mA, then the minimum value of \(R\) will be: 
               
1. \(120~\Omega\)
2. \(320~\Omega\)
3. \(390~\Omega\)
4. \(480~\Omega\)
Subtopic:  Applications of PN junction |
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A transistor is used in a common-emitter mode in an amplifier circuit. When a signal of \(10~\mathrm{mV}\) is added to the base-emitter voltage, the base current changes by \(10~\mathrm{\mu A}\) and the collector current changes by \(1.5~\mathrm{mA}\). The load resistance is \(5~\mathrm{k\Omega}\). The voltage gain of the transistor will be:
1. \(150\)
2. \(350\)
3. \(750\)
4. \(250\)
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In the given circuit, the value of current, \(I_L\) is:
(where \(R_L = 1~\text{k} \Omega\))
     
1. \(2~\text{mA}\)
2. \(4~\text{mA}\)
3. \(3~\text{mA}\)
4. \(5~\text{mA}\)
Subtopic:  Applications of PN junction |
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The photodiode is used to detect optical signals. These diodes are preferably operated in the reverse biased mode because 
1. fractional change in majority carriers produce a higher forward bias current.
2. fractional change in majority carriers produce a higher reverse bias current.
3. fractional change in minority carriers produce a higher forward bias current.
4. fractional change in minority carriers produce a higher reverse bias current.
Subtopic:  Applications of PN junction |
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Identify the logic operation performed by the given circuit:
     
1. AND gate
2. OR gate
3. NOR gate
4. NAND gate
Subtopic:  Logic gates |
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In an experiment of \(\text{CE}\) configuration of an \(\text{n-p-n}\) transistor, the transfer characteristics observed are given in the figure.
  
If the input resistance is \(200\) \(\Omega\) and output resistance is \(60\) \(\Omega\), the voltage gain in this experiment will be:
1. \(10\)
2. \(15\)
3. \(20\)
4. \(25\)
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