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Q. No.Given below are two statements:
Choose the correct answer from the options given below:
| Assertion (A): | A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically. |
| Reason (R): | Below the critical voltage limit, only majority charge carries flow which increases drastically above critical voltage. |
| 1. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
| 2. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
| 3. | (A) is True but (R) is False. |
| 4. | (A) is False but (R) is True. |
Subtopic: Β Applications of PN junction |
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Level 3: 35%-60%
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A diode has Zener voltage of \(10~\text{V}\) and maximum power dissipation of \(0.5~\text{W},\) then the minimum resistance to be used in series with this diode for safety when it is connected to a \(25~\text{V}\) power supply is:
1. \(100~\Omega\)
2. \(250~\Omega\)
3. \(300~\Omega\)
4. \(350~\Omega\)
1. \(100~\Omega\)
2. \(250~\Omega\)
3. \(300~\Omega\)
4. \(350~\Omega\)
Subtopic: Β Applications of PN junction |
Β 64%
Level 2: 60%+
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If \(X\) and \(Y\) are the inputs, the given circuit works as:
1. \(\mathrm{OR}\) gate
2. \(\mathrm{AND}\) gate
3. \(\mathrm{NAND}\) gate
4. \(\mathrm{NOR}\) gate
1. \(\mathrm{OR}\) gate
2. \(\mathrm{AND}\) gate
3. \(\mathrm{NAND}\) gate
4. \(\mathrm{NOR}\) gate
Subtopic: Β Logic gates |
Level 3: 35%-60%
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Refer to the logic circuit given below. For two inputs \((A=1, B=1) \text { and }(A=0, B=1) \text {,}\) output \((Y)\) will be:
1. \(1,0\) respectively
2. \(0,1\) respectively
3. \(0,0\) respectively
4. \(1,1\) respectively
1. \(1,0\) respectively
2. \(0,1\) respectively
3. \(0,0\) respectively
4. \(1,1\) respectively
Subtopic: Β Logic gates |
Β 72%
Level 2: 60%+
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The maximum rated power of the LED is \(2~\text{mW}\) and it is used in the circuit with input voltage of \(5~\text{V}\) as shown in the figure below. The current through resistance \(R_S\) is \(0.5~\text{mA}\). The minimum value of the resistance of \(R_S\), to ensure that the LED is not damaged is: (in \(k\Omega\))
1. \(6\)
2. \(2\)
3. \(4\)
4. \(5\)
1. \(6\)
2. \(2\)
3. \(4\)
4. \(5\)
Subtopic: Β Applications of PN junction |
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Level 3: 35%-60%
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For the given circuit (shown in part \((A)\)) the time dependent input voltage \(v_{i n}(t)\) and corresponding output \(v_{o}(t)\) are shown in part (\(B\)) and part (\(C\)), respectively. Identify the components that are used in the circuit between points \(X\) and \(Y\).
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: Β Applications of PN junction |
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Level 2: 60%+
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For the given logic circuit, which of the following inputs combination will make both LED-1 and LED-2 to glow?
1. \(A=0, B=1, C=1\)
2. \(A=1, B=0, C=0\)
3. \(A=1, B=0, C=1\)
4. \(A=1, B=1, C=0\)
1. \(A=0, B=1, C=1\)
2. \(A=1, B=0, C=0\)
3. \(A=1, B=0, C=1\)
4. \(A=1, B=1, C=0\)
Subtopic: Β Applications of PN junction |
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Level 1: 80%+
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In a semiconductor \(\mathrm{p\text-n}\) diode, the doping concentrations on \(\mathrm{p\text-}\)side and \(\mathrm{n\text-}\)side are \(10^{15}~\text{atoms/cm}^3\)
| 1. | Widths of depletion region on either side of the interface are equal |
| 2. | The depletion region widths is more on \(\mathrm{p\text-}\)side compared to that in \(\mathrm{n\text-}\)side |
| 3. | The depletion region widths is more on \(\mathrm{n\text-}\)side compared to that in \(\mathrm{p\text-}\)side |
| 4. | No depletion region forms because of unequal doping concentrations on \(\mathrm{p}\) and \(\mathrm{n\text-}\)sides |
Subtopic: Β PN junction |
Β 66%
Level 2: 60%+
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Subtopic: Β Logic gates |
Level 3: 35%-60%
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Two \(4\) bits binary numbers, \(A=1101\) and \(B=1010\) are given in the inputs of a logic circuit shown in figure below. The output (\(Y\)) will be:
1. \(Y=1101\)
2. \(Y=0010\)
3. \(Y=0111\)
4. \(Y=1000\)
1. \(Y=1101\)
2. \(Y=0010\)
3. \(Y=0111\)
4. \(Y=1000\)
Subtopic: Β Logic gates |
Β 74%
Level 2: 60%+
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