1. | \(\dfrac{v}{4}\) | 2. | \(\dfrac{v}{2}\) |
3. | \(v\) | 4. | \(4v\) |
A uniform wire of resistance \(50~\Omega\) \(\) is cut into \(5\) equal parts. These parts are now connected in parallel. The equivalent resistance of the combination is:
1. | \(2~\Omega\) \(\) | 2. | \(10~\Omega\) \(\) |
3. | \(250~\Omega\) \(\) | 4. | \(6250~\Omega\) |
The current in a simple series circuit is \(5.0\) A. When an additional resistance of \(2.0\) \(\Omega\) is inserted, the current decreases to \(4.0\) A. The original resistance of the circuit was:
1. \(1.25\) \(\Omega\)
2. \(8\) \(\Omega\)
3. \(10\) \(\Omega\)
4. \(20\) \(\Omega\)
Two resistors \(R\) and \(2R\) are connected in series in an electric circuit. The thermal energy developed in \(R\) and \(2R\) are in the ratio of:
1. \(1:2\)
2. \(2:1\)
3. \(1:4\)
4. \(4:1\)
1. | \(28\) V | 2. | \(42\) V |
3. | \(-32\) V | 4. | \(36\) V |
A silicon wafer of \(\mathrm{n}\)-type material with a cross-sectional area of \(3.14\times 10^{-6}\) m2, a conductivity of \(5.8\times 10^{7} \) siemens per metre, and an electron mobility of \(0.0032\) m2V–1s–1 is subjected to an electric field of \(20\) milli-V/m. (neglect hole concentration)
Match the items in Column-I with those in Column-II:
Column-I | Column-II | ||
(A) | The electron concentration in the wafer is | (P) | \(1.16\times 10^6\) SI units |
(B) | The current density in the wafer is | (Q) | \(3.64\) SI units |
(C) | The current flowing through the wafer is | (R) | \(6.4\times 10^{-5}\) SI units |
(D) | The drift velocity of electrons is | (S) | \(1.13\times 10^{29}\) SI units |
1. | A(P), B(Q), C(R), D(S) |
2. | A(P), B(S), C(R), D(Q) |
3. | A(S), B(P), C(Q), D(R) |
4. | A(Q), B(P), C(R), D(S) |